AOK20B120E2 1200v, 20a alpha igbt tm with soft and fast recovery anti-parallel diode general description product summary v ce i c (t c =100c) 20a v ce(sat) (t c =25c) 1.75v applications ? latest alpha igbt ( igbt) technology ? best in class v ce(sat) enables high efficiencies ? low turn-off switching loss due to fast turn-off time ? very smooth turn-off current waveforms reduce emi ? better thermal management ? high surge current capability ? minimal gate spike due to high input capacitance ? induction cooking ? rice cookers ? microwave ovens ? other soft switching applications 1200v g c e top view to - 247 g c e AOK20B120E2 symbol v ce v ge i cpulse i csm i lm diode pulsed current, limited by t jmax i fpulse t j , t stg t l symbol r ja r jc r jc note a: capacitor charging saturation current limit ed by t jmax <175c and t p <3 s c/w 1.6 300 -55 to 175 250 c/w 40 125 c 80 AOK20B120E2 w units units parameter absolute maximum ratings t a =25c unless otherwise noted tube 240 turn off soa, v ce 600v, limited by t jmax pulsed collector current, limited by t jmax maximum diode junction-to-case c/w 0.6 maximum igbt junction-to-case maximum junction-to-ambient t c =100c maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds c power dissipation p d junction and storage temperature range t c =25c thermal characteristics a parameter 80 continuous diode forward current t c =25c i f 40 a t c =100c continuous collector current t c =25c 20 40 20 a 80 a i c v AOK20B120E2 collector-emitter voltage 1200 orderable part number package type form minimum order quantity AOK20B120E2 to247 non repetitive peak collector current a 200 a 30 v gate-emitter voltage t c =100c a rev.1.0: april 2015 www.aosmd.com page 1 of 8 downloaded from: http:///
symbol min typ max units bv ces collector-emitter breakdown voltage 1200 - - v t j =25c - 1.75 2.2 t j =125c - 2.2 - t j =175c - 2.3 - t j =25c - 1.6 2 t j =125c - 2.3 t j =175c - 2.4 - v ge(th) gate-emitter threshold voltage 4.4 5.05 5.7 v t j =25c - - 10 t j =125c - - 500 t j =175c - - 5000 i ges gate-emitter leakage current - - 100 na g fs - 22.5 - s c ies - 1445 - pf c oes - 85 - pf c res - 25 - pf q g - 53.5 - nc q ge - 12 - nc q gc - 24.5 - nc r g - 2.2 - t d(off) - 123 - ns collector-emitter saturation voltage output capacitance input capacitance i ces zero gate voltage collector current v f diode forward voltage dynamic parameters a v ce =5v, i c =1ma electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions reverse transfer capacitance v ge =0v, v ce =25v, f=1mhz v ce =20v, i c =20a v ce =0v, v ge =30v forward transconductance v ce(sat) i c =1ma, v ge =0v, t j =25c v ge =15v, i c =20a v v ce =1200v, v ge =0v v ge =0v, i c =20a v turn-off delay time t j =25c v =15v, v =600v, i =20a, gate to collector charge gate to emitter charge v ge =15v, v ce =960v, i c =20a switching parameters, (load inductive, t j =25c) total gate charge gate resistance v ge =0v, v ce =0v, f=1mhz d(off) t f - 120 - ns e off - 0.82 - mj t d(off) - 144 - ns t f - 170 - ns e off - 1.32 - mj this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. v ge =15v, v ce =600v, i c =20a, r g =15 , parasitic inductance=150nh turn-off fall time t j =175c v ge =15v, v ce =600v, i c =20a, r g =15 , parasitic inductance=150nh turn-off delay time turn-off fall time turn-off energy turn-off energy switching parameters, (load inductive, t j =175c) rev.1.0: april 2015 www.aosmd.com page 2 of 8 downloaded from: http:///
typical electrical and thermal characteristics 0 20 40 60 80 100 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 i f (a) v f (v) 25 c 175 c -40 c 0 30 60 90 120 150 180 0 1 2 3 4 5 6 7 i c (a) v ce (v) figure 1: output characteristic (t j =25c) 9v 20v 17 v 15v 11v v ge = 7v 13v 0 10 20 30 40 50 60 4 7 10 13 i c (a) v ge (v) 175 c 25 c -40 c v ce =20v 0 30 60 90 120 0 1 2 3 4 5 6 7 i c (a) v ce (v) figure 2: output characteristic (t j =175c) v ge =7v 9 v 20v 17 v 15v 11v 13v v f (v) figure 4: diode characteristic v ge (v) figure 3: transfer characteristic 0 1 2 3 4 5 0 25 50 75 100 125 150 175 v ce(sat) (v) temperature (c) figure 5: collector-emitter saturation voltage vs. junction temperature i c =40a i c =10a i c =20a 2 3 4 5 6 7 0 25 50 75 100 125 150 175 v ge(th) (v) t j (c) figure 6: v ge(th) vs. t j rev.1.0: april 2015 www.aosmd.com page 3 of 8 downloaded from: http:///
typical electrical and thermal characteristics 0 3 6 9 12 15 0 10 20 30 40 50 60 70 v ge (v) q g (nc) figure 7: gate-charge characteristics v ce =960v i c =20a 0 50 100 150 200 250 300 350 25 50 75 100 125 150 175 power disspation (w) t case ( c) 1 10 100 1000 10000 0 5 10 15 20 25 30 35 40 capacitance (pf) v ce (v) figure 8: capacitance characteristic c ies c res c oes t case ( c) figure 10: power disspation as a function of case 0 10 20 30 40 50 60 25 50 75 100 125 150 175 current rating i c (a) t case (c) figure 11: current de-rating rev.1.0: april 2015 www.aosmd.com page 4 of 8 downloaded from: http:///
typical electrical and thermal characteristics 1 10 100 1000 10000 0 10 20 30 40 switching time (ns) i c (a) figure 12: switching time vs. i c (t j =175c, v ge =15v, v ce =600v, r g =15 ) td(off) tf 1 10 100 1000 10000 0 25 50 75 100 125 150 175 switching time (ns) r g ( ) figure 13: switching time vs. r g (t j =175c, v ge =15v, v ce =600v, i c =20a) td(off) tf 1 10 100 1000 10000 0 50 100 150 200 switching time (ns) td(off) tf 0 50 100 150 200 t j (c) figure 14: switching time vs.t j ( v ge =15v, v ce =600v, i c =20a, r g =15 ) rev.1.0: april 2015 www.aosmd.com page 5 of 8 downloaded from: http:///
typical electrical and thermal characteristics 0 1 2 3 0 10 20 30 40 switching energy (mj) i c (a) figure 15: switching loss vs. i c (t j =175c, v ge =15v, v ce =600v, r g =15 ) eoff 0 1 2 3 4 0 25 50 75 100 125 switching energy (mj) r g ( ) figure 16: switching loss vs. r g (t j =175c, v ge =15v, v ce =600v, i c =20a) eoff 1 2 3 4 switching energy (mj) eoff 1 2 3 4 switching energ y (mj) eoff 0 0 25 50 75 100 125 150 175 200 t j (c) figure 17: switching loss vs. t j (v ge =15v, v ce =600v, i c =20a, r g =15 ) 0 100 200 300 400 500 600 700 v ce (v) figure 18: switching loss vs. v ce (t j =175c, v ge =15v, i c =20a, r g =15 ) rev.1.0: april 2015 www.aosmd.com page 6 of 8 downloaded from: http:///
typical electrical and thermal characteristics 1.e-08 1.e-07 1.e-06 1.e-05 1.e-04 1.e-03 1.e-02 0 50 100 150 200 i ce(s) (a) temperature (c) figure 19: diode reverse leakage current vs. junction temperature v ce =1200v v ce =960v 0 0.6 1.2 1.8 2.4 3 0 25 50 75 100 125 150 175 v sd (v) temperature (c) figure 20: diode forward voltage vs. junction temperature 40a 20 a 5a if=1a 0.001 0.01 0.1 1 10 1e-06 1e-05 0.0001 0.001 0.01 0.1 1 10 z jc normalized transient thermal resistance pulse width (s) figure 21: normalized maximum transient thermal imp edance for igbt d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =0.6 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d 0.001 0.01 0.1 1 10 1e-06 1e-05 0.0001 0.001 0.01 0.1 1 10 z jc normalized transient thermal resistance pulse width (s) figure 22: normalized maximum transient thermal imp edance for diode d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =1.6 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d rev.1.0: april 2015 www.aosmd.com page 7 of 8 downloaded from: http:///
figure a: gate charge test circuit & waveforms figure b: inductive switching test circuit & waveforms figure c: diode recovery test circuit & waveforms rev.1.0: april 2015 www.aosmd.com page 8 of 8 downloaded from: http:///
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